2. Consider a contact between Au (gold) and N-type Si (Nd = 10¹6/cm³) at 300 K. The work function of Au is 5.1 V and the electron affinity of Si is 4.05 V. (a) Calculate the theoretical Schottky barrier height (B). (b) Calculate the built-in potential (bi). Use Nc = 2.8 x 10¹⁹/cm³. (c) Calculate the depletion layer width (Wdep). (d) Calculate the depletion layer capacitance (Cdep). Assume the diode area is 10- 2 cm². (e) What is the applied reverse bias if the measured capacitance under the bias is 270 pF? (f) Calculate the diode current at 300 K under a forward bias of 0.5 V. Assume the zero-bias current (lo) is 5.85 × 10-6 A.​