Respuesta :
Answer:
Explanation:
Substitutional diffusion is a mechanism in which diffusant substitutes for the host atoms by displacing them from their lattice sites and high activation energy process. Substitutional diffusants (e.g. all p- and n-type dopants in silicon) feature low diffusion coefficient.
Interstitial diffusion mechanism in which diffusant moves in between host atoms in the lattice and low activation energy process. Interstitial diffusants (e.g. gold in silicon) feature high diffusion coefficient.
So when temperature increase, there is a slight change in the number of molecules in the interstitial sites, but when compared to substitutional diffusion, the intermolecular distance plays an integral role which is a function of temperature. As the temperature increases, more thermal energy are available in substitutional diffusion thus, diffusion is higher at higher temperature.
The diffusion is higher at a higher temperature.
When Substitutional diffusion is a mechanism in which additional substitutes for the host atoms by displacing them from their lattice sites and increased activation energy strategy. Substitutional diffusions ( For Example all p- and also n-type dopants in silicon) feature a low diffusion coefficient.
What is Substitutional diffusion?
Interstitial diffusion mechanism in which further moves in between host atoms in the lattice and lower activation energy process. Interstitial diffusions (For example gold in silicon) feature an increased diffusion coefficient.
So when The temperature increases, there is a slight modification in the number of molecules in the interstitial sites, but when compared to substitutional diffusion, When the intermolecular distance plays an integral role which is a function of temperature. Then As the temperature increases, more thermal energy is available in substitutional diffusion therefore, The diffusion is higher at the higher temperature.
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